Lithography

Exposure of photosensitive material

In microfabrication, photolithography – or UV lithography (UVL) – describes the transfer of a geometric pattern from a photomask to a light-sensitive chemical photoresist (substrate) based on photon absorption. In this way, complex integrated circuits or CMOS wafers, for example, go through several photolithographic cycles. Laser lithography, an application of multiphoton absorption, enables localized but high-resolution exposure of photosensitive material. In contrast to their environment, the exposed areas show a different chemical solubility and also allow the generation of extremely complex 3D structures whose structures are in the submicrometer range. Laser lithography is considered as a key technology in many fields. This includes nano- and microelectronics, fluidics, and biotechnology. In most cases, short laser pulses in the (sub-) nanosecond range are used.

Other techniques such as laser interference lithography (LIL), nano-imprint lithography (NIL), and stereolithography (SLA) are methods for patterning regular arrays of fine details and 3D prototyping for medical and biotechnology applications without using complex optical photomasks.

Related products:

2024-03-14T14:29:52+00:00

FQCW266-10

  • Power: 10 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00
2024-03-14T14:33:10+00:00

FQCW266-25

  • Power: 25 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00
2024-03-14T14:36:59+00:00

FQCW266-50

  • Power: 50 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00
2024-03-14T14:38:08+00:00

FQCW266-100

  • Power: 100 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00
2024-03-14T14:39:39+00:00

FQCW266-200

  • Power: 200 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00
2023-01-19T12:51:06+00:00

FQCW266-500

  • Power: 500 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00
2023-01-19T12:51:35+00:00

FQCW266-1000

  • Power: 1000 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00
2023-11-17T14:25:55+00:00

FTSS355-Q1

  • Pulse energy: 0,3 µJ
  • Wavelength: 355 nm
  • Average power: 5 mW
  • Max. repetition rate: 20000 Hz
  • Peak power: 1 kW
2023-01-19T14:15:52+00:00

FTSS355-Q2

  • Pulse energy: 3 µJ
  • Wavelength: 355 nm
  • Average power: 30 mW
  • Max. repetition rate: 10000 Hz
  • Peak power: 3 kW
2023-01-19T14:16:48+00:00

FTSS355-Q3

  • Pulse energy: 15 µJ
  • Wavelength: 355 nm
  • Average power: 15 mW
  • Max. repetition rate: 2500 Hz
  • Peak power: 14 kW
2023-01-19T14:17:20+00:00

FTSS355-Q4

  • Pulse energy: 39 µJ
  • Wavelength: 355 nm
  • Average power: 42 mW
  • Max. repetition rate: 1000 Hz
  • Peak power: 38 kW
2023-01-19T13:28:12+00:00

FTSS355-50

  • Pulse energy: 70 µJ
  • Wavelength: 355 nm
  • Average power: 7 mW
  • Max. repetition rate:100 Hz
  • Peak power: 54 kW
2023-01-19T13:41:19+00:00

FTSS355-300

  • Pulse energy: 300 µJ
  • Wavelength: 355 nm
  • Average power: 6 mW
  • Max. pulse frequency: 80 Hz
  • Peak power: 174 kW