Technical data:
Wavelength | 532 nm |
Pulse energy | > 2 μJ @ 15 kHz |
Peak power | > 1.5 kW @15kHz |
Pulse repetition rate | ≤ 20 kHz |
Pulse width (FWHM) | ≤ 1.3 ns |
Polarisation orientation and purity | > 100:1 vertical |
Pulse energy drift over 6h | < ± 5 % |
Pulse-to-pulse energy stability | < 3% @15kHz |
Laser class | 3B / IIIb |
Spatial mode | TEM00 |
Beam divergence 2Θ | < 3.5 mrad |
Beam diameter | 250 ± 50 μm |
Power consumption mean (max) | 15 W (max.40 W) |
Operating voltage | 12 V DC |
Line voltage | 90 – 265 V AC |
Marking | CE |
- RS 232, USB
- External Trigger (TTL, rising edge) single shot (pulse on demand) – max. repetition rate
- Interface for TTL-control and power monitor
Warm-up time | < 5 min |
Operating temperature | 18 – 38 °C |
- Stand-alone system (incl. key-switch, heat-sink and manual shutter; CDRH compliant)
- Synchronization signal output (rise time <2 ns)
- Fiber coupling for fibers with core diameter > 70 μm
- Manual shutter or electrical beam blocker
- External beam expander (e.g. 3x)
- Manual or electric attenuator on request
- Manual or electrically driven wavelength switch 532 nm / 1064 nm
- Closed-loop operation for pulse energy on request
Compact DPSS solid-state lasers with passive Q-switching
The FDSS532-Q laser series, like all CryLaS pulse lasers with microchip as resonator, belongs to the family of diode-pumped solid-state (DPSS) lasers with passive Q-switching. The compact housing, combined with relatively high pulse power makes the lasers a suitable light source for applications where high energies with short pulse durations are required with minimal housing dimensions.
A diode-pumped microchip consisting of a resonator (Nd:YAG crystal) and a saturable absorber (Cr:YAG) bonded to it serves our lasers for beam generation. Starting from the 1064 nm fundamental wave, NLO optics (non-linear optics) are used to generate frequency multiples of this fundamental wave, and in some cases combine them, so that we can generate a wide range of laser wavelengths.
In contrast to CryLaS lasers at 213 nm, 266 nm, 355 nm and 1064 nm, the Q, MOPA and High Power lasers at 532 nm are in the visible spectral range (400 nm to about 750 nm). This green light is well perceived by the human eye, which is the reason for exploiting the generally good visibility of green laser light. Often this type of laser is used as a marking laser in construction or in medicine during operations. On the other hand, the lasers are suitable for ablation of biological material. This includes, but is not limited to, LIBS on gemstones or other materials that strongly absorb 532 nm. By having only one conversion stage between 1064 nm and 532 nm, our green Q lasers are capable of emitting comparatively high pulse energies.
Our pulsed, passively Q-switched microchip laser systems are suitable for use in industry (OEM) and scientific research due to their polyvalence. We are able to produce five different wavelengths from IR to DUV for our pulsed lasers:
- 1064 nm
- 532 nm
- 355 nm
- 266 nm
- 213 nm
The pulsed lasers are divided into three product lines and are considered reliable and field-proven laser sources for an extremely versatile range of applications. The product lines base on 3 different concepts, which differ at least in energy levels, pulse frequencies and pulse duration of the lasers.
Plug-and-play: CryLaS lasers are convincing due to their easy integration into your experimental setup or laboratory equipment. We support you with the integration of our lasers from idea generation to prototypes to the final development of your product. Our nanosecond lasers are characterized by high quality, low service requirements and low operating costs.
The most important aspects at a glance:
- 20 kHz max. repetition rate
- Compact housing and controller
- Output energy from 2 µJ up to ca. 42 µJ
- Average output power in the range of 20 mW to 60 mW