Based on CryLaS’ first development, the DSS1064 high-power laser, an entire product line has been designed. This emits at low frequencies from 20 Hz to about 100 Hz and, in terms of controller and laser head dimensions, is slightly larger than the Q lasers developed on top of it. However, the high-power lasers offer higher single pulse energies. Inside an air-sealed capsule are non-linear optics that produce multiples of the fundamental’s frequency of 1064 nm. Frequency doubling, tripling, quadrupling and quintupling eventually lead to a broadband spectrum of laser wavelengths that can be generated with this concept:
- 213 nm
- 266 nm
- 355 nm
- 532 nm
- 1064 nm
The almost complete absence of noise in this type of laser is also ensured by a closed control loop. The temperature inside the laser head, which is constantly changing due to external influences or heat generation in the resonator, is controlled using a photodiode signal. This monitors the intensity of the emitted laser radiation live. In this way, the laser is always operated at its optimum, which keeps the noise of the laser power low.
The 213 nm lasers of the high-power series are based on frequency doubling of the 1064 nm fundamental wavelength by NLO crystals. The fundamental is generated by pumping a microchip with a laser diode (808 nm). The chip itself consists of a Nd:YAG resonator and a saturable absorber (Cr:YAG). The IR laser beam is passed through conversion crystals, converted and combined with other frequency multiples so that ultimately 213 nm can be emitted. This wavelength has a high photon energy of about 5.8 eV. This makes it ideal for fluorescence or photoluminescence analysis of semiconductors or other materials where high energies are required for excitation, ionization or sublimation. Mass spectroscopy on aerosols is also a possibility.