Main applications:

  • Ablation
  • Fluorescence
  • Mass spectroscopy

Product family advantages:

  • User-friendly plug-and-play system
  • Very compact design
  • Available in 5 different wavelengths
  • Short pulses by passive q-swirching
  • Closed loop control for stabilization of output power
  • Internal and external trigger
  • Single shot on demand and burst mode
  • OEM or stand-alone

Technical data:

High pulse energy and short pulse durations in the UV range

Based on CryLaS’ first product development, the DSS1064 high-power laser, an entire product series has been developed. This operates at low pulse repetition rates of 20 Hz to about 100 Hz and, in terms of controller and laser head footprint, is less compact than the Q-Laser series developed later. In return, the high-power lasers offer a higher pulse energy level in compensation. Inside an sealed capsule are NLO crystals that generate frequency multiples of the fundamental wavelength of 1064 nm. Frequency doubling to quintupling finally results in a broadband spectrum of laser wavelengths that can be generated by means of this concept:

  • 213 nm
  • 266 nm
  • 355 nm
  • 532 nm
  • 1064 nm

Furthermore, the almost complete absence of noise in this type of laser is ensured by a closed control loop. The temperature inside the laser head, which is always changing due to external influences or heat generation inside the resonator, is adjusted according to a photodiode signal. This monitors the intensity of the emitted laser radiation live. Thus, the laser is always operated at its optimum, which keeps the noise of the laser power low.

The 266 nm lasers of the high-power model series are based on frequency conversion, more precisely on frequency quadrupling of the 1064 nm fundamental wavelength by non-linear optics. The fundamental is generated by pumping a microchip with a laser diode (808 nm). The chip itself consists of a Nd:YAG crystal and a saturable absorber (Cr:YAG). The infrared laser beam is passed through two conversion crystals in sequence so that finally 266 nm can be emitted. This wavelength has a high photon energy of about 4.6 eV. This makes it ideal for fluorescence or photoluminescence analysis of semiconductors or other materials where high energies are needed for excitation, ionization or sublimation. This type of laser is used for ablation and mass spectrometry.

Due to the passive Q-switching compact designs are possible, especially in comparison to actively Q-switched lasers. Because of this and the associated electronic components that are not required, a large part of the acquisition costs are eliminated. In addition to the sealed capsule for the conversion crystals, the laser housing itself is also airtight. This helps to ensure the long service life of these lasers, as the inner workings are not contaminated by dust or similar. All relevant information about the laser system is stored on an EEPROM and can also be called up and adjusted during remote maintenance. This makes it possible to carry out optimizations and possible repairs in the field. There are practical options available, depending on the application. For example, we offer attenuators for laser energy, wavelength switchers or expanding optics. The lasers are suitable for continuous operation in scientific and industrial environments.


  • Max. repetition rate: 80 Hz – 100 Hz
  • High output energy in a compact housing: 50 µJ -260 µJ
  • Average power up to … mW
  • Peak power from 50 kW to 130 kW

More pulse lasers of the same wavelength



  • Power: 10 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00


  • Power: 25 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00


  • Power: 50 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00


  • Power: 100 mW
  • Linewidth: < 300 kHz
  • Coherence length: > 1000 m
  • Beam quaility M2: < 1.3
  • Fundamental mode: TEM00