The FQSS266-Q model series, like all our microchip resonator pulsed lasers, is from the family of diode-pumped solid-state (DPSS) lasers with passive Q-switching. The compact design with comparatively high pulse power makes the lasers an ideal beam source for applications requiring high energies at short pulse durations (about one nanosecond) with the smallest possible footprint.
The laser medium is a so-called microchip consisting of a laser-active Nd:YAG crystal bonded to a saturable absorber (a Cr:YAG crystal). An air-sealed capsule finally houses the non-linear optics, which can produce a wide range of output wavelengths using frequency conversion and combination. In order to obtain the best possible absence of particles and to avoid effects such as solarization, the conversion crystals are enclosed in an air-sealed capsule.
Due to the wavelength of 266 nm, the laser carries a high photon energy. For example, in fluorescence, the photon energy is critical for overcoming a larger band gap. This is especially the case with semiconductors, such as gallium arsenide GaN. By absorbing the photon energy, it is possible, with UV or DUV radiation, to bridge even large band gaps. The laser is also suitable for ionization of (biological) material.
Our pulsed, passively Q-switched microchip laser systems are suitable for use in industrial (OEM) and scientific research due to their polyvalence. It is possible for us to generate five different wavelengths from IR to DUV for our pulsed lasers:
- 1064 nm
- 532 nm
- 355 nm
- 266 nm
- 213 nm