Technical data:
| Wavelength | 266 nm |
| Pulse energy | > 0.3 μJ @15kHz |
| Peak power | > 0.3 kW @15kHz |
| Pulse repetition rate | ≤ 20 kHz |
| Pulse width (FWHM) | ≤ 1.0 ns |
| Polarisation orientation and purity | > 100:1 vertikal |
| Pulse energy drift over 6h | < ± 5 % |
| Pulse-to-pulse energy stability | < 3 % @15kHz |
| Laser class | 4 / IV |
| Spatial mode | TEM00 |
| Beam divergence 2Θ | < 2 mrad |
| Beam diameter | 800 ± 200 μm |
| Power consumption mean (max) | 15 W (max.40 W) |
| Operating voltage | 12 V DC |
| Line voltage | 90 – 265 V AC (50 – 60 Hz) |
| Marking | CE |
- RS 232, USB
- External Trigger (TTL, rising edge) single shot (pulse on demand) – max. repetition rate
- Interface for TTL-control and power monitor
| Warm-up time | < 5 min |
| Operating temperature | 18 – 38 °C |
- Stand-alone system (incl. key-switch, heat-sink and manual shutter; CDRH compliant)
- Synchronization signal output (rise time <2 ns)
- External beam expander (M = 5x)
- Manual shutter or electrical beam blocker
- Manual or electrically operated wavelength switch 266 nm / 532 nm
- Manual or electric attenuator on request
- Closed-loop operation for pulse energy on request
Compact deep UV pulse laser for industry and science
The FQSS266-Q model series, like all our microchip resonator pulsed lasers, is from the family of diode-pumped solid-state (DPSS) lasers with passive Q-switching. The compact design with comparatively high pulse power makes the lasers an ideal beam source for applications requiring high energies at short pulse durations (about one nanosecond) with the smallest possible footprint.
The laser medium is a so-called microchip consisting of a laser-active Nd:YAG crystal bonded to a saturable absorber (a Cr:YAG crystal). An air-sealed capsule finally houses the non-linear optics, which can produce a wide range of output wavelengths using frequency conversion and combination. In order to obtain the best possible absence of particles and to avoid effects such as solarization, the conversion crystals are enclosed in an air-sealed capsule.
Due to the wavelength of 266 nm, the laser carries a high photon energy. For example, in fluorescence, the photon energy is critical for overcoming a larger band gap. This is especially the case with semiconductors, such as gallium arsenide GaN. By absorbing the photon energy, it is possible, with UV or DUV radiation, to bridge even large band gaps. The laser is also suitable for ionization of (biological) material.
Our pulsed, passively Q-switched microchip laser systems are suitable for use in industrial (OEM) and scientific research due to their polyvalence. It is possible for us to generate five different wavelengths from IR to DUV for our pulsed lasers:
- 1064 nm
- 532 nm
- 355 nm
- 266 nm
- 213 nm
The pulsed lasers are divided into three product lines and are known as reliable and field-proven laser sources for an extremely versatile range of applications. The product series are based on three different concepts, each bringing different energy levels, pulse repetition rates and pulse durations.
Plug-and-play: CryLaS lasers stand for easy installation into your experimental setup or laboratory instrument. We support you in the integration of our lasers from idea generation, through prototypes, to the finished development of your product. Our nanosecond lasers prove themselves through their high quality, low service requirements and low operating costs.
The most important aspects at a glance:
- 20 kHz max. repetition rate
- Compact housing and controller
- Output energy 300 nJ up to approx. 12 µJ
- Average output power in the range of 4 mW to 12 mW
More pulse lasers of the same wavelength
FQCW266-10
- Power: 10 mW
- Linewidth: < 300 kHz
- Coherence length: > 1000 m
- Beam quaility M2: < 1.3
- Fundamental mode: TEM00
FQCW266-25
- Power: 25 mW
- Linewidth: < 300 kHz
- Coherence length: > 1000 m
- Beam quaility M2: < 1.3
- Fundamental mode: TEM00
FQCW266-50
- Power: 50 mW
- Linewidth: < 300 kHz
- Coherence length: > 1000 m
- Beam quaility M2: < 1.3
- Fundamental mode: TEM00
FQCW266-100
- Power: 100 mW
- Linewidth: < 300 kHz
- Coherence length: > 1000 m
- Beam quaility M2: < 1.3
- Fundamental mode: TEM00
